Stability of low voltage n-type organic field effect transistors

Abstract

We are presenting the long time operational stability of C60 based n-type organic field effect transistors (OFETs). Behavior of the device characteristics has been monitored under different conditions of bias stress up to 120 days. By measuring several cycles of measurements of transfer and output characteristics, the long time stability of C60 based OFETs and their reproducibility have been documented. The major instability of the threshold voltage is discussed by considering the effects of light and darkness on de-trapping of the trapped charges during the bias stress. A shift in the threshold voltage during the continuous bias stress occurs, which recovers back to the initial value during the storage time in a glove box. By comparing the device characteristics, the fluctuations in the device parameters are presented for the entire period of measurements. Furthermore, no appreciable change in the relative source–drain current has been measured during the entire period of investigations, thus the C60 based low voltage n-type OFETs proves satisfactory stability for an electronic circuit design.