Stability Investigation of Single-Wafer Process by Using a Spin Etcher

Abstract

Etch rate instability was found in a spin etcher. When chemical was pumped to the spin etcher, the flow rate became unstable; possibly resulting in a chemical deficiency due to low mass transport at the wafer edge. Consequently, the etch rate and etch uniformity are unstable. The detailed etch mechanism has been investigated and the mass transport deficiency can be avoided. Less than 2% of etch nonuniformity and a stable process can be achieved by achieving a stable flow rate and control of the surface reaction over the whole wafer in spin etching.