Abstract
In order for a crystal to grow, source atoms must be incorporated into the underlying lattice. Typically, this process occurs on the surface in one of two modes: either through island nucleation or through step flow. However, a third, morphologically unstable growth mode has been predicted. Monitoring the surface of ultraflat substrates with an in situ scanning electron microscope, we prove that for the (111) face of silicon there is a transition from stable step flow to morphological instability and then to island nucleation.
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