Abstract
By combining atomic force microscopy and x-ray reflectivity measurements, the morphological evolution at the ${\text{SiO}}_{2}/\text{Si}(001)$ interface during thermal silicon oxidation was systematically studied as a function of oxidation temperatures. We found that the oxidation-induced roughening switches to smoothening at an oxidation temperature of $1250\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}$ on the oxidation front. The transition is governed by how the strain induced by oxidation is spatially relieved at the interfaces in the silicon oxide bulk film through the interfacial transition layers, which is inevitably important for the strain-relief mechanism.
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