Abstract
Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the conventional 6T SRAM cell. To increase the stability of the cell various SRAM cell topologies has been introduced, 8T SRAM is one of them but it has its limitation like read disturbance. In this paper we have analyzed a novel PP based 9T SRAM at 45 nm technology. Cell which has 33% increased SVNM (Static Voltage Noise Margin) from 6T and also 22%.reduced leakage power. N curve analysis has been done to find the various stability factors. As compared to the 10T SRAM cell it is more area efficient.
Highlights
The high demand of increasing packaging density and low power SRAMs for multimedia applications leads to the problem of data stability
Various topologies of SRAM cell has been introduced, 7T SRAM cell in which a read static noise margin is achieved by cutting off a pull down path during read operation but has limited write capability due to single end write operations [1]. 8T SRAM cell which is one of the popular topology which increases the stability but has its own limitation
SRAM functional margins are determined by three SRAM design Parameters: static noise margin (SNM), write margin (WRM), and cell current (Icell)
Summary
The high demand of increasing packaging density and low power SRAMs for multimedia applications leads to the problem of data stability. Various Read & Write assist methods were introduced to enhance the write margin and read stability of 6T Cells. Various topologies of SRAM cell has been introduced, 7T SRAM cell in which a read static noise margin is achieved by cutting off a pull down path during read operation but has limited write capability due to single end write operations [1]. 8T SRAM cell which is one of the popular topology which increases the stability but has its own limitation. In this paper the limitation of 8T has been removed and alternative topologies have been discussed to increase the stability [2].
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