Sputtering of silicon nanopowders by an argon cluster ion beam.

Xiaomei Zeng,Sergey Belykh,Dejun Fu,Wenbin Zuo,Zhenguo Wang,Xiangheng Xiao,Alexander Tolstogouzov,Vasiliy Pelenovich

doi:10.3762/bjnano.10.13

Abstract

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

Highlights

Etching using gas clusters is generally recognized an effective technique to sputter solid materials [1]
One can see that the sputtering yield increases from 14.3 to 28.6 atoms/cluster with decreasing average density from 2.34 g/cm3 to 0.95 g/cm3, respectively
The sputtering yield reaches a maximum of 32.4 atoms/cluster at the density of 1.4 g/cm3

Summary

Introduction

Etching using gas clusters is generally recognized an effective technique to sputter solid materials [1]. In comparison with bombardment by a monomer beam, cluster irradiation increases the sputtering yield Y (estimated as a number of the sputtered target atoms per cluster ion) by one order of magnitude.

Results

Conclusion