Abstract
Argon gas cluster ion beam (GCIB) was employed to improve the surface smoothness of indium tin oxide (ITO) substrates. The dependence of the smoothness as well as of the sputtered depth on cluster ion energy and dose has been studied. Results show that relatively low-energy (10keV) clusters with mean size of 2000 Ar atoms are sufficient to reduce the mean roughness of the ITO surface to about one fourth of its initial value.Organic electroluminescent (EL) devices (α-NPD/Alq3/Mg–Ag) were formed on the smoothed surfaces and a considerable improve of the devices’ EL efficiency was observed.
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