Sputtering of LiF and other halide crystals in the electronic energy loss regime

Abstract

Sputtering experiments were performed by irradiating LiF, NaCl, and RbCl crystals with various swift heavy ions like S, Ni, I, Au with energies between 60 and 210 MeV, C60 clusters between 12 and 30 MeV or Pb ions between 730 and 6040 MeV. Sputtered species are collected on arc-shaped catchers and subsequently analyzed by elastic recoil detection analysis or Rutherford backscattering analysis. The study focuses on angular distributions and total yields for LiF and covers a broad range of experimental parameters including cleaved or rough sample surfaces, ion fluence, beam incident angles, and different ion velocities leading to electronic energy loss (Se) values from 5 to 45 keV/nm. In most cases, the angular distribution has two components, a jet-like peak perpendicular to the surface sample superimposed on a broad isotropic cosine distribution whatever is the beam incident angle. The observation of the jet depends mainly on the surface flatness and angle of ion incidence. However, the jet does not appear clearly when irradiated with C60 cluster. The sputtering yield is stoichiometric and characterized by huge total yields of up to a few 105 atoms per incident ion. The yield follows a power law as function of electronic energy loss, Y follows an exponential law with Sen with n ~ 4. While the azimuthal symmetry for sputtering is observed at low ion velocity (~1 MeV/u), it seems to be lost at high velocity (>4 MeV/u). The data provide a comprehensive overview how the angular distribution and the total sputtering yield scale with the energy loss, beam incidence angle and ion velocity. Complementary experiments have been done with NaCl and RbCl targets confirming the observation made for LiF.