Abstract
The dependences of sputtering yield Y of highly oriented pyrolytic graphite under high fluences (1018–1019ion/cm2) 30keV N2+ irradiation at ion incidence angles from θ=0 (normal incidence) to θ=80° at room temperature (RT) and T=400°C have been measured to trace the radiation damage influence on angular behavior of sputtering yield. A difference has been found between angular dependences of sputtering yields at RT, when the irradiation leads to a high degree of disorder, and at temperatures, larger than the temperature Ta responsible for annealing the radiation damage at continuous ion bombardment.
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