Sputtering of CoSi(100) and CoSi 2(100) single crystal surfaces

Abstract

The composition of CoSi(100) and CoSi 2(100) surfaces is shown to change considerably upon sputtering with Ar + ions in the energy range 300–3000 eV. Generally, preferential sputtering of Si is observed, more pronounced approaching low ion energies. The density corrected sputter yield ratio, k Si/ k Co, is found to be different at the compounds investigated, suggesting an influence of the chemical bonding of the atoms to be sputtered at the respective surfaces. The results fit very well into recent sputter data of low/high atomic mass compounds.