Abstract
Low energy ion sputtering for depth profiling in SIMS, AES and XPS produces sputter induced artifacts. These effects are studied by comparing RBS spectra of the bombarded layer to the original target composition. For this purpose an automated RBS chamber has been built combining an Atomika SIMS system and a NEC microprobe RBS beam line. In this article the effect of ion beam mixing of Pt on Si and of CoSi 2 on Si under oxygen bombardment, as well as the preferential sputtering of Si in CoSi 2 under Ar bombardment are demonstrated.
Published Version
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