Abstract
We report on the structural and electrical characterization of sputter-deposited W–Ag and W–Al alloy thin films which are of interest for non-volatile magnetoresistive random-access memory (MRAM) applications. Films with Ag doping between 5 and 27wt.% and Al doping between 5 and 31wt.% were studied, before and after annealing at 250°. The desired for MRAMs highly resistive β-W phase is obtained after annealing of the 5wt.% Ag-doped film and its resistivity is 112.5±4.3μΩ·cm, lower than the one of annealed pure W films (133.9±4.9μΩ·cm). This W–Ag alloy provides an underlayer for MRAM multilayer growth, improved compared to pure W films.
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