Sputtered silicon antimony thin film for the infrared detection layer of microbolometer

Abstract

We have studied on the sputtered silicon antimony thin film for bolometric materials of mid-IR range application. In order to obtain high detectivity of infrared sensors, the infrared detection materials which have been using today as a resistor must have a high temperature coefficient of resistance (TCR) and low noise. We fabricated silicon films and their alloy films by sputtering and plasma-enhanced chemical vapor deposition. PECVD deposited silicon film has been found to exhibit high level of 1/f noise but having reasonable TCR. On the other hand silicon antimony alloy films have a good TCR comparing to the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and very low levels of 1/f noise than PECVD Si films. Moreover the silicon antimony films have low resistivity and been expected to be the best CMOS compatible material for a high performance microbolometer having high TCR and low 1/f noise.