Abstract
AbstractIn this work, we present the structural and electrical properties of HfO2, HfO2 + SiO2, and HfO2 + Al2O3 dielectric composite layers deposited by sputtering without any intentional substrate heating. The films were deposited on glass and 〈100〉 crystalline silicon (c‐Si) substrates from ceramic targets by using argon (Ar) and oxygen (O2) as sputtering and reactive gases, respectively. The incorporation of SiO2 and Al2O3 into hafnia was obtained by co‐sputtering and it was controlled by adjusting the ratio of r.f. power applied between the targets. The HfO2 films present a microcrystalline structure, when deposited at room temperature (RT). The lowest leakage current in c‐Si MIS (Metal‐Insulator‐Semiconductor) structures (below 109 A/cm2 at 10 V on films with a thickness around 180 nm) was obtained for an Ar/O2 ratio of 14:1 sccm, and further increase in O2 flow does not enhance the electrical characteristics. The co‐deposition of SiO2 or Al2O3 with hafnia has a strong influence on the structure of the resulting films since they become amorphous. The leakage current in MIS structures incorporating these multi‐component dielectrics is reduced at least by a factor of 2, which is accompanied by an increase on the band gap. The dielectric constant is decreased due to the lower values for SiO2 and Al2O3.
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