Abstract
Broadening of Al sputter profiles in Al x Ga 1- x As/GaAs structures has been investigated using secondary ion mass spectrometry. The depth profiling was carried out with 32O + 2 ions and 40Ar + ions using net primary energies of 1.8, 2.2, 3.2 and 5.7 keV. The decay lengths of the Al profiles show a pronounced increase with increasing sputtering ion energy caused by ballistic mixing. Moreover, in the O + 2 case the λ-values degrade with eroded depth, indicating that beam-induced surface roughening takes place during profiling and in particular, this holds for high x-values. The results are discussed in terms of a semi-empirical model for ion-beam-induced broadening developed by Zalm and Vriezema.
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