Abstract
A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7−x thin films on MgO. The YBa2Cu3O7−x thin film grown on a pre-sputtered region of MgO was rotated 45° about the [001] axis relative to the YBa2Cu3O7−x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O7−x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45° grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations.
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