Microstructure of artificial 45° [001] tilt grain boundaries in YBCO films grown on (001) MgO

Abstract

It is well known that high-angle grain boundaries in YBa2Cu3O7−x (YBCO) show weak-link effects and behave as Josephson junctions. This kind of grain boundary junction (GBJ) has potential applications in magnetic field measurement and electronic devices. This work studies the microstructure of artificially made GBJs in YBCO films on (001) MgO and the mechanism of the boundary formation, with the goal to improve the GBJ quality and obtain a better understanding of the junctions’ transport properties.Ion-sputter-induced epitaxy is used to form YBCO films with isolated 45° [001] tilt grain boundaries. Prior to YBCO film growth the (001) MgO substrate is selectively sputtered by a low energy Ar ion beam. A portion of the substrate remains non-sputtered by protecting the surface with a patterned photoresist mask. After removing the mask, a YBCO film is grown on the substrate using pulsed organometallic molecular beam epitaxy (POMBE). Under suitable conditions single crystal YBCO c-axis films can be reproducibly obtained in both the sputtered and non-sputtered regions. The orientation between the films and the substrate has been examined by both x-ray diffraction and electron diffraction. The in-plane orientation relation is [110]YBCO//[100]MgO on the non-sputtered epitaxially polished MgO and [100]YBCO//[100]MgO on the sputtered MgO. Thus, 45° tilt boundaries are formed in the film at the boundary between the sputtered and non-sputtered substrate regions.