Abstract
Co-Zn ferrite and BaM ferrite films were deposited on silicon wafer disks with thermally oxidized surface layer without annealing process, and their read/write characteristics in contact mode have been investigated by using a MIG and Mn-Zn ferrite head with gap length of 0.2-0.4 μm. The highest linear recording density D 50 of Co-Zn ferrite and Ba ferrite films were 105 and 190 kFRPI, respectively. Clear dipulse was observed for isolated wave form of Ba ferrite disks and then dipulse ratio was 0.65. It was concluded that the Co-Zn ferrite films and Ba ferrite films have high potential as an isotropic and a perpendicular recording layer, respectively, in contact recording mode at ultra-high density.
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