Abstract
Abstract Highly conducting and transparent undoped and indium doped tin oxide (SnO2:In) thin films are prepared by spray technique at different doping concentration of Indium (In). The X-ray diffraction pattern of SnO2:In thin films are confirmed the tetragonal phase of SnO2. The resistivity of SnO2:In film is increased with increased the doping concentration of In due to the effect of ionized impurity and intragrain scattering mobility. The optimized (SnO2:In) thin film is used as a photo anode in the organic solar cells (OSC) of configuration of SnO2:In/PDOT:PSS/P3HT:PCBM/Al. The photo conversion efficiency of OSC is obtained 1.06% for SnO2 layer and it was observed 0.56% for In doped SnO2 based photoanode.
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