Abstract

A spot-size converter integrated semiconductor optical amplifier (SSC-SOA) was developed as a gate element in an optical switch matrix for photonic switching applications. By a selective metal-organic vapor phase epitaxy technique, a bulk InGaAsP stripe, including an active region and thickness tapered SSCs, was grown. Wavelength composition of the stripe, strain on the stripe, and electrode coverage above the SSC region were optimized. As a result, gate operation for fiber-to-fiber gain of 0 dB was achieved at a low injection current of 30 mA, and the polarization dependence of the gain was eliminated as well.

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