Abstract
The effect of mesa shape on the planarity of InP regrowths produced by atmospheric pressure and low pressure (0.1 atm) selective (SiO2 masked) metalorganic vapor phase epitaxy (MOVPE) is investigated. We find that for two separate atmospheric pressure reactor configurations (vertical and horizontal with a factor of 4 difference in growth rate), relatively planar regrowths are reproducibly obtained only when the mesa is non-reentrant, that is, with the narrowest portion of the mesa at the top in contact with the mask. For reentrant mesas grown at atmospheric pressure, the non-planarity is characterized by a large lateral growth rate at the top of the mesa just underneath the mask and by a very small growth rate underneath the volume of large lateral growth, the combination of which results in deep trenches on the side of the mesa and mask overgrowth from the edges. On the other hand, selective MOVPE at low pressure results in planar regrowths on the same reentrant mesas that had produced extremely non-planar regrowths during atmospheric pressure growth.
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