Abstract
Abstract Defects present in molecular-beam-epitaxy (MBE}-grown ZnSe films on GaAs(100), Ge(100) and Si(100) substrates were studied using transmission electron microscopy and X-ray pole figures. Growth twins, lying preferentially on two of the four possible {111} planes, were the primary defects. A mechanism for spontaneous twin formation, based on the orientation of initial nuclei for three-dimensional island nucleation and growth, is postulated. The anisotropic distribution of twins and their visibility in cross-sectional transmission electron microscopy specimens has been explained using the model.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
