Abstract
Abstract Defects present in molecular-beam-epitaxy (MBE}-grown ZnSe films on GaAs(100), Ge(100) and Si(100) substrates were studied using transmission electron microscopy and X-ray pole figures. Growth twins, lying preferentially on two of the four possible {111} planes, were the primary defects. A mechanism for spontaneous twin formation, based on the orientation of initial nuclei for three-dimensional island nucleation and growth, is postulated. The anisotropic distribution of twins and their visibility in cross-sectional transmission electron microscopy specimens has been explained using the model.
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