Abstract
Linear patterns were spontaneously formed on the silica and titania dip-coating films prepared from tetramethyl orthosilicate (Si(OCH3)4) and titanium tetraisopropoxide (Ti(OC3H7i)4) solutions, respectively. In both films, the pattern formation occurred at extremely low substrate withdrawal speeds below 1.0 cm min−1, where the film thickness increased with decreasing substrate withdrawal speed for dip-coating. The linear patterns on micrometre scale were arranged perpendicular to the substrate withdrawal direction. The values of RZ (10 point height of irregularities) and S (mean spacing of local peaks) of the patterns increased with decreasing substrate withdrawal speed.
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