Sol‐Gel Preparation of Transparent and Conductive Aluminum‐Doped Zinc Oxide Films with Highly Preferential Crystal Orientation

Abstract

Transparent aluminum‐doped zinc oxide (ZnO) films were prepared via the sol‐gel method on silica‐glass substrates from 2‐methoxyethanol solutions of zinc acetate and aluminum chloride that contained monoethanolamine. Dip coating was conducted at room temperature, with substrate withdrawal rates of 1.2‐7.0 cm/min. After each deposition, the films were heat‐treated in air at 200°‐450°C for 10 min (pre‐heat‐treatment). After six to fourteen layers had been deposited, the films were then subjected to annealing in air at 500°‐800°C for 1 h (the first post‐heat‐treatment), followed by annealing in nitrogen at 500°‐700°C for 15 min to 4 h (the second post‐heat‐treatment). All the films obtained were transparent and showed only an extremely sharp ZnO (002) peak in the X‐ray diffractometry (XRD) patterns. The effects of the aluminum content, the substrate withdrawal speed, and the heat‐treatment conditions on the electrical resistivity of the films were studied. All these factors strongly affected the resistivity. The lowest resistivity value (6.5 10‐3 Omegacm) was achieved in a film that contained 0.5 at.% aluminum, prepared with a low substrate withdrawal speed (1.2 cm/min), and a pre‐heat‐treatment of individual layer at 400°C in air and a post‐heat‐treatment of the entire film at 600°C in air, followed by a post‐heat‐treatment at 600°C in nitrogen. These preparation parameters also affected the degree of crystal orientation, which was revealed by the intensity of the ZnO (002) XRD peak. Higher crystal orientation was effective in reducing the film resistivity, whereas the higher grain‐packing density and possible aluminum segregation were thought to have positive and negative effects, respectively, in reducing the resistivity.