Abstract
Our study of metalorganic vapor-phase epitaxy grown self-assembled In 0.5Ga 0.5As quantum structures on GaAs(2 1 1)B substrate showed strong shape dependence on growth temperature ( T g). Small In 0.5Ga 0.5As islands grown at 510°C coalesce, forming a wire structure in the [0 1 1] direction with increasing T g up to 630°C. At T g exceeding 650°C, the structure changes to large, asymmetric islands consisting of facets minimizing emerging surface energy. In addition, quantum dot (QD) size uniformity is improved with an increase in T g. After the GaAs buffer layer growth at T g range exceeding 670°C, surface shows straight, a uniform saw-tooth corrugation consisting of (3 1 1)B and (3 2 2)B terraces. QDs do form on the (3 1 1)B surface, not on the (3 2 2)B surface. Using selective area QD formation, well-aligned rows of QDs were fabricated on (2 1 1)B substrates.
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