Abstract
Short-term annealing in the paraelectric phase causes an exponential drop in the dielectric permittivity in the ferroelectric phase of triglycine sulfate (TGS) crystals and Rochelle salt crystals. This is due to the spontaneous enlargement of the nonequilibrium domain structure of these crystals. Introducing radiation or impurity defects into a TGS crystal accelerates the processes of dielectric relaxation with their localization near ТС only.
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