Abstract
AbstractSpontaneous emission properties of a quantum dot embedded in a semiconductor microcavity are theoretically investigated. High Q value of the cavity yields both weak and strong coupling states, the former of which is mainly focused. There, spontaneous emission spectrum has doublet shape, which is caused by a quantum interference. This interference is robust against detuning between the excitation of the quantum dot and cavity mode. The time domain analysis is performed for further characterization of the high Q weak coupling state. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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