Abstract
Wafers with LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical - mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si - Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.
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