Abstract
In this work, the authors propose a split-gate resurf stepped oxide with P-pillar (SGRSOP) UMOS structure. The P-pillar trench under the source electrode in SGRSOP U-shape metal-oxide-semiconductor (UMOS) serves the purpose of simultaneously achieving the following: (1) it has formed a local super junction (SJ) structure with the N-type drift. The P-pillar modulates the electric field distribution in the local SJ and increases the N− drift region doping concentration. (2) It has suppressed the parasitic bipolar junction transistor (BJT) effect by adding the P-pillar in the N− drift region, enlarges the boundary of the snapback. As compared with the SGRSO UMOS, the SGRSOP UMOS only add the P-pillar structure, while it has the better performance. The simulation results show that the SGRSOP UMOS reduces the on-state specific resistance (RSP) and increases the transconductance (gm), improves the figure of merit and its UIS ruggedness is as good as that of the split-gate resurf stepped oxide UMOS.
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