Abstract
The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has been proposed. The epitaxial layer of HDSGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration. The research shows that the reduced SURface field (RESURF) active has been enhanced due to the high doped epitaxial layer, which can modulate the electric field distribution and reduce the internal high electric field. Therefore, the HDGRSO UMOSFET has a higher breakdown voltage (BV), a lower on-state specific resistance (RSP) and a better figure of merit (FOM). According to the results of Technology Computer Aided Design (TCAD) simulations, the FOM (BV2/RSP) of HDSGRSO UMOSFET has been improved by 464%, and FOM (RSP × Qgd) of HDSGRSO UMOSFET has been reduced by 27.9% compared to the conventional structure, respectively, when the BV is 240 V. Furthermore, there is no extra special process required in this advanced fabrication procedure, which is relatively cost-effective and achievable.
Highlights
The power MOSFET has been widely used in the analog and digital circuits
The epitaxial layer of HDGRSO u-shape metal oxide semiconductor field effect transistor (UMOSFET) has been divided into three parts: the upper epitaxial layer, the lower epitaxial layer and the middle epitaxial layer with higher doping concentration
The breakdown voltage for the two structures is shown in the Figure 5a, and the limit of drain current density is 1 μA/μm2
Summary
The power MOSFET (metal oxide semiconductor field effect transistor) has been widely used in the analog and digital circuits. It is one of the most vital research fields to reduce the on-state specific resistance (RSP ) for a certain breakdown voltage (BV). The RSP in conventional MOSFET (MOSFET) is limited by the 1D Silicon limit where the RSP and the BV are oppositely affected by the doping concentration. There are two kinds of power MOSFET structures, one is the power Superjunction (SJ) MOSFET [2,3,4]. The SJ MOSFET can decrease the RSP , Appl.
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