Abstract
The status of the integration, the modeling, and the layout of spiral inductors on silicon substrates for rf circuits are reviewed. A summary of the current research activity in this field is presented. The possible inductor implementations are categorized either as conservative, following the silicon main stream, or as innovative approaches. It is concluded that the spiral inductor on silicon is a feasible device and finds extensive use in the design of future silicon-based rf circuits. © 1998 John Wiley & Sons, Inc. Int J RF and Microwave CAE 8: 422–432, 1998.
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