Abstract
AbstractIn this paper, for the first time, a novel physical structure of planar spiral inductors fabricated on a multilayered Bragg reflector is proposed. The multilayered Bragg reflector (BR) was fabricated on Si substrate. The effects of the multilayered Bragg reflector and inductor patterns on the characteristics of inductors are studied. The results show that the inductors fabricated on the Bragg reflector result in a significant improvement in terms of the S11‐parameter. This approach seems highly feasible and promising for future Si‐based RF IC applications. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1296–1298, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21621
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