Abstract
Growth spirals are observed on metalorganic vapor phase epitaxy grown GaAs surfaces by atomic force microscopy. The growth mechanism is according to the classical Burton–Cabrera–Frank theory. Spirals originate from screw dislocations. Successive turns of the steps are sent out by the dislocations. These steps are of monolayer height (0.28 nm) and the interstep distance is around 150 nm.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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