Abstract
Spin-valve (SV) films Si(100)/Ta30/NiFe50/CoFe20/Cu26/CoFe23/Ru7/CoFe20/IrMn50/Ta30 (in Å) exhibit a room temperature (RT) giant magnetoresitance (GMR) ratio of 8.5% with an effective exchange pinning field (Heex) of ∼1.3 kOe and an antiferromagnetic (AF) saturation field (Hs) of ∼6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150 °C with Heex>500 Oe, while a conventional spin valve [Si(100)/Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Å] has a GMR ratio of 5.0% with Hex<200 Oe. The synthetic sample also showed a superior thermal stability with a RT GMR value of 6.9% (compared to 6.1% for conventional sample) after an anneal at 250 °C for 10 h. Shielded narrow track synthetic SV readers demonstrated high amplitude, large dynamic range, and excellent magnetic stability, indicating extendibility for ultrahigh density read head applications.
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