Abstract
We have studied the spin polarized shot-noise current in semimagnetic tunneling diodes with different sample geometries. In general, we observe only partial shot-noise suppression near the end of the negative differential resistance (NDR) region. The charge buildup and its fluctuation on the resonant levels at given geometry can help to project efficient low voltage (V<10mV) spin-filter devices working with small barrier offset (∼10meV) and magnetic field (B0≤5)T.
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