Spin-filtering effects and negative differential resistance in N/B-doped zigzag silicon carbide nanoribbons with asymmetric edge hydrogenation

Abstract

Spin transport properties of the N/B-doping zigzag-edged silicon carbide nanoribbons (ZSiCNRs) are studied by using density functional theory and the non-equilibrium Green's function method. The ZSiCNR has Si-H2 bonded at one edge while CH bonded at the other to constructed asymmetric edge hydrogenation. Our findings show, the N atom substitutes with C site while the B atom prefers to be localized at the Si site. Also, the B and N doped ZSiCNRs exhibit half-metallic, metallic, and bipolar semiconductor behavior at ferromagnetic or antiferromagnetic states, which the possibility of designing of spintronic nanodevices would be provided. The obtained I-V characteristic shows a perfect spin filtering effect (100%) in such N/B doping ZSiCNRs with an asymmetric edge. Moreover, the spin-polarized negative differential resistance (NDR) effect is also observed in the spin-polarized currents. Our suggested devices will be promised for multifunctional spintronic devices.