Perfect spin filtering, rectifying and negative differential resistance effects in armchair graphene nanoribbons

Abstract

Using the non-equilibrium Green's function method combined with the spin-polarized density functional theory, we calculate the electronic and transport properties of the armchair graphene nanoribbons with a special edge hydrogenation (S-AGNRs). The results show S-AGNRs are ferromagnetic bipolar magnetic semiconductors with 2μB magnetic moment, and the B or N atom doping can make S-AGNRs convert to up-spin dominated or down-spin dominated half metal. Therefore, a 100% spin-filtering effect has been realized in the corresponding devices. Furthermore, the negative differential resistance phenomenon can also be found. The B and N atoms co-doping can construct a PN junction, and the rectification ratio is as high as 1010.