Abstract
Spin-dependent tunneling has been investigated for ferromagnetic tunnel junctions with a new structure, which consists of a hard ferromagnetic insulating granular thin film sandwiched between two soft ferromagnetic layers, or soft ferromagnetic and non-ferromagnetic layers. The granular film, consisting of ferromagnetic Co80Pt20 nanosize particles embedded in a SiO2 matrix with 13 nm thickness, has a high coercive force. The film was prepared by co-sputtering of Co80Pt20 and SiO2 targets on a glass substrate with a Cr or a Co80Pt20/Fe underlayer as a bottom electrode. A ferromagnetic Co9Fe layer as a top electrode was deposited over the granular film to form cross pattern junctions of 0.01 mm2 junction area through a metal mask. The tunneling magnetoresistance up to 4.5% at RT was observed for a Co9Fe/Co80Pt20–SiO2/Co80Pt20/Fe junction at a low field.
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