Abstract
Spin-dependent single-electron tunnelling phenomena have been investigated in current-perpendicular-to-plane geometry for insulating granular systems. The sample structure consists of a 7–12-nm-thick Co–Al–O granular film sandwiched by the top and bottom electrodes. A very thin Al–O layer has been added between the bottom electrode and the granular film as a bottleneck of conductance, leading to the successful observation of Coulomb staircases in the current–bias voltage I–Vb characteristics. The Vb dependence of tunnel magnetoresistance (TMR) shows clear oscillatory behaviour associated with the Coulomb staircase. The TMR oscillation is interpreted as a phenomenal characteristic of spin-dependent single-electron tunnelling.
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