Abstract
Spin transport in polycrystalline Sb films has been studied by using NiFe∕Sb∕NiFe lateral spin valve devices. A clear spin valve effect was detected in the magnetoresistance measurements, which were carried out using a conventional four-terminal geometry. The observation of a memory effect in these results indicates that the spin valve signal originates from spin injection and detection determined by the magnetization orientations of the two ferromagnetic electrodes in the NiFe∕Sb∕NiFe device. From our analysis of the spin valve signals, the authors estimate that the spin diffusion length in the Sb film is ∼2.3μm, with an injected spin polarization across the NiFe∕Sb interface of 0.8% at 20K.
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