Spin transport in N-armchair-edge silicene nanoribbons

Abstract

In this article, we have investigated spin polarized electronic transport in N-armchair-edge silicene nanoribbons (N-ASiNRs, where N is the number of atoms in armchair edge) using semi-classical Monte-Carlo approach. Monte Carlo simulations are used to model spin transport along with spin density matrix calculations in the semiconductor devices. The spin vector dephasing in the silicene nanoribbons are due to Elliott-Yafet (EY) and D'yakonov-Perel (DP) relaxation mechanisms. In this article, we theoretically studied spin polarized transport along the length of the N-armchair-edge silicene nanoribbons structure and the spin dephasing length is estimated to be in the range of 3 μm for N-ASiNRs. Next, we have investigated the ensemble averaged spin vector variation in N-ASiNRs along the length of the nanoribbons with varying temperature. We observe a negligible variation in the spin dephasing length in the temperature range of 4 K to 373 K. As the localized temperature increases from 373 K to 1000 K, we observe a decrease in the spin dephasing length by extrapolating the curve up to 1000 K and in these higher temperature ranges spin dephasing length decrease due to hot electron/phonon effects and higher scattering rates. We have also studied the ensemble averaged spin vector variation in N-ASiNRs along the length of the nanoribbons with varying width (N) of the nanoribbons and found negligible effect of width (N) on the spin dephasing length in N-ASiNRs. In our study, we finally find N-armchair-edge silicene nanoribbons to be the promising candidates for next generation spintronics devices.