Spin transport in buckled bilayer silicene

Abstract

In this article, we have theoretically studied and investigated spin polarized electronic transport in buckled bilayer silicene (BLS) using semi-classical Monte–Carlo approach. Monte Carlo simulations are used to model spin transport along with spin density matrix calculations in the semiconductor devices. Dephasing of the spin vectors in the buckled bilayer silicene is due to Elliott–Yafet (EY) and D’yakonov–Perel (DP) relaxation mechanisms. The spin dephasing length is estimated in the range of 2μm for buckled bilayer silicene. Next, we investigated the ensemble averaged spin vector variation in buckled bilayer silicene along the length of the device with varying temperature. We observe a negligible variation in the spin dephasing length in the temperature range of 4–77K. As the temperature increases from 77K to 373K, we find a monotonous decrease in the spin dephasing length. In our study, we found buckled bilayer silicene to be a promising candidate for next generation spintronic devices.