Abstract
The band structures of GaSb in the Γ-valley as well as L/X-valley are excellently reproduced with sp3d5s* nearest-neighbor tight-binding model. The electron spin splitting energy and the spin–orbit interaction coefficients in the Γ, L and X multi-valleys are calculated. In the Γ-valley, the results obtained are in good agreement with experimental report. We then further extend our calculations to the GaSb L- and X-valleys. We also present the results of the top three valence bands in the Γ-valley. Due to the small band offset and large difference of the density of states between Γ- and L-valleys, it is shown that even at zero electric field, there is still an explicit electron population in the L-valley. These results are important to the realization of spintronic device and the investigation of spin dynamics far away from equilibrium.
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