Abstract
The paper presents a unified theoretical description of various mechanisms leading to spin splitting in inversion layers in various two-dimensional structures in narrow-gap semiconductors. The model is based on a three band k · p Hamiltonian and describes, in addition to the Zeeman splitting, contributions from sp-d exchange interaction in diluted magnetic (semimagnetic) semiconductors and effects due to electric fields and interfaces. Theoretical results are compared with available experimental data.
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