Abstract
We demonstrate the tunneling in spin-split barriers made of ferromagnetic EuO grown on Si(111) substrates by molecular beam epitaxy. For 6 nm thick EuO films with high crystal quality and atomically sharp interfaces, we find a barrier height lowering driven by the spin splitting below the Curie temperature of 35 K. We determined the splitting energy to be 0.56 ± 0.03 eV at 20 K which results in a spin polarization above 90%.
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