Abstract
AbstractMagnetotransport experiments under in‐plane [110] uniaxial compression up to 2.4 kbar of a (001) p‐GaAs/Al0.5Ga0.5As single heterostructure have been performed. A pronounced redistribution of carriers in the spin‐split lowest heavy hole subband in favour of the less populated and lighter mass one is established but the total carrier concentration reveals only a 5% decrease. The difference between the effective masses in spin subbands becomes less. The spin subband splitting decreases by a factor of 2.5 under maximum compression.
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