Abstract
AbstractIt has been shown that under uniaxial compression P applied at low temperatures the transport properties of 2D electrons at a n‐(001)GaAs/Alx Ga1–x As heterointerface are governed mainly by the piezoelectric field. It arises across the structure in the [001] direction when the stress is applied in the [110] or [1$ \bar 1 $0] directions and causes the corresponding compensating redistribution of charges that increases the 2D electron concentration in a quantum well if P ‖[110] and decreases it if P ‖[1$ \bar 1 $0]. The anisotropy of the 2D electron mobility does not significantly change under uniaxial stress up to 3.5 kbar and does not indicate the change of the energy spectrum anisotropy that takes place in a 2D hole system under compression. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
