Abstract
A numerical study on spin-polarized transport properties in a quasi-one-dimensional wire with Rashba quantum dots is presented. The ballistic spin transmission probability and spin density profiles are obtained using the quantum transmitting boundary method. The Fano-Rashba effect on the spin transmission is analyzed as a function of the Rashba spin-orbit coupling strength for single dot and double dot systems. The spin density profiles show the localized states that contribute to the backscattering and spin-flip processes in the Rashba dots. The results enlighten us on the Fano-Rashba effect caused by local Rashba spin-orbit coupling and provide concrete ideas for modeling a system with spin-polarized transport for future applications.
Highlights
The development of nanotechnology has been a subject of significant focus in recent decades
We analyze the results from two perspectives – that of the transmission probabilities (TP) rate change and that of the Fano-Rashba resonance (FRR) dip change upon variation of the number of dots and the Rashba spin-orbit coupling (RSOC) strength (γ0)
We have investigated the Fano-Rashba effect for ballistic spin-polarized transmission through a quasi-1D semiconductor quantum wire with different numbers of Rashba quantum dots
Summary
The development of nanotechnology has been a subject of significant focus in recent decades. Fundamental studies have been carried out on the properties of materials and the possibility of a new paradigm of applications As part of this effort, research involving the spin degree of freedom of the electron has recently exploded. The asymmetric potential can be tuned using an additional electric field external to the system.[2,3] In a spin transistor, electrons with aligned spins are injected into the channel and an external electric field induces strong Rashba spin-orbit coupling (RSOC) to rotate the spins. This is the key concept behind a spin-polarized field effect transistor (SPFET)
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