Spin–orbit torque-induced memristor in Ta/GdFeCo/Ta structures for neuromorphic computing

Abstract

Neuromorphic computation of ferrimagnetic materials as artificial synapses is essential for the development of ultra-low power spintronic devices. Here, Ta/GdFeCo/Ta heterostructures are utilized to achieve a spin–orbit torque-driven multistate magnetization switching, complying with the requirements of neuromorphic computation. For Ta/GdFeCo/Ta device, the switching ratio is up to 47.7 % when the critical current density value is 1.26 × 107 A/cm2. Moreover, the βDL and βFL are estimated as 85.64 Oe/(107 A/cm−2) and 35.05 Oe/(107 A/cm−2), respectively. Subsequently, the findings establish that a stable four-resistor state exists, proofing multilevel memory behaviors and synaptic plasticity under current drive. It is further demonstrated that neuromorphic computing built from this SOT device can perform unsupervised handwritten digit recognition with an accuracy of 92.25 %. This research highlights the potential of SOT-driven multi-energy stabilized residual states for neuromorphic computing and multi-energy storage in the future.